Formation of nickel silicide on nitrogen ion implanted silicon
作者： L.W. Cheng , J.Y. Chen , J.C. Chen , S.L. Cheng , L.J. Chen
关键词: Epitaxy 、 Nitrogen 、 Inorganic chemistry 、 Silicon 、 Boron 、 Ion 、 Nickel 、 Metallurgy 、 Ion implantation 、 Materials science 、 Crystallinity
摘要: The self-aligned-silicidation technique has become a crucial part of ultra-high speed CMOS technologies. Many studies on NiSi have been reported recently. possesses many advantages and appears to be suitable candidate replace TiSi/sub 2/ in future ULSI devices. Nitrogen ion implantation used suppress the boron arsenic diffusion as well hot-carrier degradation. In this paper, formation nickel silicides nitrogen implanted silicon is investigated. phase [001]Si was suppressed shifted higher temperature compared that blank sample. presence found improve crystallinity epitaxial NiSi/sub 2/. effects silicide more pronounced with increase dose implantation.
nctu.edu.tw参考文章(8)
J.B. Lasky, J.S. Nakos, O.J. Cain, P.J. Geiss, Comparison of transformation to low-resistivity phase and agglomeration of TiSi/sub 2/ and CoSi/sub 2/ IEEE Transactions on Electron Devices. ,vol. 38, pp. 262- 269 ,(1991) , 10.1109/16.69904
S.L. Cheng, L.J. Chen, B.Y. Tsui, Low-resistivity TiSi2 contacts on nitrogen implanted ultra-shallow junctions Materials Chemistry and Physics. ,vol. 50, pp. 172- 175 ,(1997) , 10.1016/S0254-0584(97)80255-6
Takashi Murakami, Takashi Kuroi, Yoji Kawasaki, Masahide Inuishi, Yasuji Matsui, Akihiko Yasuoka, Application of nitrogen implantation to ULSI Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms. ,vol. 121, pp. 257- 261 ,(1997) , 10.1016/S0168-583X(96)00583-6
R. Mukai, S. Ozawa, H. Yagi, Compatibility of NiSi in the self-aligned suicide process for deep submicrometer devices Thin Solid Films. ,vol. 270, pp. 567- 572 ,(1995) , 10.1016/0040-6090(95)06936-4
C.K. Lau, Y.C. See, D.B. Scott, J.M. Bridges, S.M. Perna, R.D. Davies, Titanium disilicide self-aligned source/drain + gate technology 1982 International Electron Devices Meeting. pp. 714- 717 ,(1982) , 10.1109/IEDM.1982.190394
Shyam P. Murarka, Self-aligned silicides or metals for very large scale integrated circuit applications Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. ,vol. 4, pp. 1325- 1331 ,(1986) , 10.1116/1.583514
M.E. Alperin, T.C. Holloway, R.A. Haken, C.D. Gosmeyer, R.V. Karnaugh, W.D. Parmantie, Development of the self-aligned titanium silicide process for VLSI applications IEEE Transactions on Electron Devices. ,vol. 32, pp. 141- 149 ,(1985) , 10.1109/T-ED.1985.21923
T. Morimoto, T. Ohguro, S. Momose, T. Iinuma, I. Kunishima, K. Suguro, I. Katakabe, H. Nakajima, M. Tsuchiaki, M. Ono, Y. Katsumata, H. Iwai, Self-aligned nickel-mono-silicide technology for high-speed deep submicrometer logic CMOS ULSI IEEE Transactions on Electron Devices. ,vol. 42, pp. 915- 922 ,(1995) , 10.1109/16.381988