作者: Martin Nieto , Jean-Paul Allain , Vladimir Titov , Matthew R. Hendricks , Ahmed Hassanein
DOI: 10.1063/1.2337106
关键词: Xenon 、 Plasma 、 Irradiation 、 Ionization 、 Thin film 、 Extreme ultraviolet lithography 、 Atomic physics 、 Sputtering 、 Extreme ultraviolet 、 Materials science
摘要: The effect of energetic xenon ion bombardment on the extreme ultraviolet (EUV) reflectivity performance mirrors is vital importance for discharge- and laser-produced plasma lithography sources. To study these effects, we measured absolute relative reflectivities at National Institute Standards Technology Interaction Materials with Particles Components Testing facility to quantify effects singly ionized Xe Ru EUV collector mirrors. Results show that unity sputtering reached Xe+ energies near 400–500eV. Xe+-induced sputter yield decreases an order magnitude only a 60% decrease in energy. Incident angle-dependent data weakly dependent angle 1keV. Dynamic measurements situ during irradiation oxygen state reflecting mirror has significant reflect...