作者: Charles Dennison
DOI:
关键词: Salicide 、 Diode 、 Stack (abstract data type) 、 Substrate (printing) 、 Optoelectronics 、 Shallow trench isolation 、 Electrode 、 Trench 、 Electrical engineering 、 Materials science 、 Phase-change memory
摘要: The invention relates to a process of forming phase-change memory device. includes salicide structure in peripheral logic portion the substrate and preventing structures array. device may include double-wide trench into which single film is deposited but two isolated lower electrodes are formed therefrom. Additionally diode stack that communicates electrode.