Method for forming phase-change memory bipolar array utilizing a single shallow trench isolation for creating an individual active area region for two memory array elements and one bipolar base contact

作者: Charles Dennison

DOI:

关键词: SalicideDiodeStack (abstract data type)Substrate (printing)OptoelectronicsShallow trench isolationElectrodeTrenchElectrical engineeringMaterials sciencePhase-change memory

摘要: The invention relates to a process of forming phase-change memory device. includes salicide structure in peripheral logic portion the substrate and preventing structures array. device may include double-wide trench into which single film is deposited but two isolated lower electrodes are formed therefrom. Additionally diode stack that communicates electrode.

参考文章(26)
Stanford R Ovshinsky, Symmetrical current controlling device ,(1963)
Graham R. Wolstenholme, Fernando Gonzalez, Raymond A. Turi, Tyler A. Lowrey, Trung Tri Doan, Vertical diode structures with low series resistance ,(1997)
Stanford R Ovshinsky, Wolodymyr Czubatyj, Quiyi Ye, David A Strand, Stephen J Hudgens, None, Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom ,(1994)
Boil Pashmakov, Wolodymyr Czubatyj, David A. Strand, Patrick J. Klersy, Standford R. Ovshinsky, Sergey Kostylev, Memory element with memory material comprising phase-change material and dielectric material ,(1999)
Stanford R. Ovshinsky, Boil Pashmakov, Wolodymyr Czubatyj, Guy C. Wicker, Tyler Lowrey, Sergey A. Kostylev, Patrick J. Klersy, Electrically programmable memory element with improved contacts ,(2000)