Method for forming a semiconductor structure through epitaxial growth
作者： Raymond M. Roop , Bishnu Gogoi
DOI:
关键词: Substrate (printing) 、 Single crystal 、 Layer (electronics) 、 Electronic engineering 、 Microelectromechanical systems 、 Epitaxy 、 Optoelectronics 、 Dielectric 、 Semiconductor 、 Materials science 、 Semiconductor structure
摘要: A method for creating a MEMS structure is provided. In accordance with the method, an article provided which comprises substrate (101) and single crystal semiconductor layer (105), having sacrificial (103) comprising first dielectric material disposed between layer. An opening (107) created extends through (105) exposes portion of (101). anchor (109) second then formed in (107). Next, epitaxially grown to suitable device thickness, thereby forming (111).
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