Binding-Energies of Core Excitons in Semiconductors

摘要: Excitons from core levels in semiconductors are treated by the effective-mass approximation. The problem of appropriate electron-hole interaction is considered and electron polaron model which treats valence electrons as quantum oscillators adapted order to include dynamical effects. An effective Hamiltonian obtained, contains hole polarization self-energies an electronhole interaction, all terms depending on variational parameters. Because large-hole self-energy best choice parameters corresponds free-electron a Coulomb screened static dielectric constant. Consideration dispersive effects preserves above results, but modifies introduces screening. results unable explain large increase binding energies excitons with respect excitons. It argued that this effect can be explained nonlocal screening contributions due off-diagonal matrix coupled interference Bloch functions equivalent minima at position.