Single electron calculations for the Si L2, 3 near edge structure

摘要: Abstract We show, for the first time, that near edge structure of crystalline silicon L2, 3 in absorption spectroscopy at an energy resolution 0.3 eV can be largely explained without invoking many-body effects, or core excitons. Previous attempts to compare experimental results with total density final states, matrix element weighting, have lead erroneous interpretations.