Reduced graphene oxide field-effect transistor with indium tin oxide extended gate for proton sensing

作者: Thuy Kieu Truong , T.N.T. Nguyen , Tran Quang Trung , Il Yung Sohn , Duck-Jin Kim

DOI: 10.1016/J.CAP.2014.03.007

关键词: Indium tin oxideTransistorTransducerElectrodeElectrolyteOxideField-effect transistorOptoelectronicsNanotechnologyGrapheneMaterials science

摘要: Abstract In this study, the reduced graphene oxide field-effect transistor (rGO FET) with indium tin (ITO) extended gate electrode was demonstrated as a transducer for proton sensing application. structure, area of ITO is isolated from active rGO FET. The properties based on FET were analyzed. device encapsulation by tetratetracontane (TTC) layer showed good stability in electrolytic solutions. an ambipolar behavior shifts Dirac point pH electrolyte varied. sensitivity shift parameter about 43–50 mV/pH wide range values 2 to 12. may be considered potential H + electrolytes. Its can modified further various ions applications.

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