作者: R A Rahman , M A Zulkefle , K A Yusof , W F H Abdullah , M Rusop
DOI: 10.1088/1757-899X/99/1/012019
关键词: Titanium dioxide 、 Thin film 、 Indium tin oxide 、 Materials science 、 Spin coating 、 Buffer solution 、 Bilayer 、 Analytical chemistry 、 Zinc 、 Annealing (metallurgy)
摘要: This paper presents an investigation on titanium dioxide (TiO2) and zinc oxide (ZnO) bilayer film, which is used as sensing membrane for extended-gate field effect transistor (EGFET) pH application. TiO2/ZnO thin films were deposited using sol-gel spin coating method indium tin (ITO) substrates. After the deposition, annealed at constant temperatures 400 °C 15, 30, 40 60 minutes. The sensitivity of TiO2 film towards buffer solution was measured by dipping in pH4, pH7 pH10 solution. By varying annealing time, we found that 400°C 15 minutes gave highest compared to other conditions, with value 64.87 mV/pH.