作者: X. H. Zhu , E. Defaÿ , A. Suhm , E. Fribourg-Blanc , M. Aïd
DOI: 10.1063/1.3428390
关键词: Permittivity 、 Dielectric loss 、 Materials science 、 Relative permittivity 、 Pyrochlore 、 Dissipation factor 、 Optoelectronics 、 Sputter deposition 、 Dielectric 、 Inorganic chemistry 、 Thin film
摘要: PbO–MgO–Nb2O5–TiO2 (PMNT) pyrochlore thin films were prepared on Pt-coated silicon substrates by radio-frequency magnetron sputtering and postdeposition annealing method. Very interestingly, these pyrochlore-structured PMNT exhibited ultralow dielectric losses, with a typical loss tangent as low 0.001, relatively high constants, typically er∼170. It was found that the relative permittivity slightly but continuously increased upon cooling without any signature of structural phase transition, displaying quantum paraelectriclike behavior; meanwhile, did not show noticeable dispersion in real part over wide temperature range (77–400 K). Their responses could, however, be efficiently tuned applying dc electric field. A maximum applied bias field 1 MV/cm resulted ∼20% tunability permittivity, giving rise to fairly large coefficient nonlinearity, ∼2.5×...