Molecular beam epitaxy.

摘要: Molecular beam epitaxy is an ultrahigh vacuum technique for growing very thin epitaxial layers of semiconductor crystals. Because it inherently a slow growth process, extreme dimensional control over both major compositional variations and impurity incorporation can be achieved. The result that has been possible, with one combination lattice-matched semiconductors, GaAs Al x -Ga l– As, to demonstrate large variety novel single-crystal structures. These results have important implications fundamental studies the physics thin-layered structures development new electronic optoelectronic devices.