Calculation of Phonons in Superlattices the Ge/Si Superlattices Along [0 0 1]
作者： George Kanellis
DOI: 10.1007/978-1-4757-6565-6_13
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摘要: Since the invention of Molecular Beam Epitaxy 1–2 , a method which allows for multi-layer heterostructures to be grown with atomically abrupt interfaces and precise thickness control constituent compositionally different layers, considerable continous interest has been shown investigation unusual properties these systems.
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