Effect of an electric field on the luminescence of GaAs quantum wells
作者： E. E. Mendez , G. Bastard , L. L. Chang , L. Esaki , H. Morkoc
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摘要: Low-temperature photoluminescence (PL) measurements have been performed in narrow GaAs-${\mathrm{Ga}}_{1\ensuremath{-}x}{\mathrm{Al}}_{x}\mathrm{As}$ quantum wells subject to an electric field perpendicular the well plane. At low fields PL spectra show two peaks associated, respectively, with exciton and free-electron-to-impurity recombination. With increasing intensity decreases, excitonic structure decreasing at a much faster rate, becomes completely quenched of few tens kV/cm. This is accompanied by shift peak position lower energies. The results are interpreted as caused field-induced separation carriers modification Variational calculations for isolated, finite explain qualitatively experimental observations.
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