Luminescence properties of GaAs‐Ga1−xAlxAs double heterostructures and multiquantum‐well superlattices grown by molecular beam epitaxy
作者： P. M. Petroff , C. Weisbuch , R. Dingle , A. C. Gossard , W. Wiegmann
DOI: 10.1063/1.92237
关键词: Luminescence 、 Materials science 、 Molecular beam epitaxy 、 Scanning transmission electron microscopy 、 Cathodoluminescence 、 Optoelectronics 、 Superlattice 、 Photoluminescence 、 Epitaxy 、 Heterojunction 、 Physics and Astronomy (miscellaneous)
摘要: Undoped double‐heterostructures (DH) and multiquantum‐well structures (MQW) grown by molecular beam epitaxy are studied cathodoluminescence photoluminescence. Their structural properties established scanning transmission electron microscopy. In DH discrete nonradiative centers observed with densities ∼104–105 cm−2; some of them correlated dislocations originating in the substrate. sharp contrast, MQW show a very uniform luminescence no action at dislocations. These results might explain part higher quantum efficiency epitaxy.
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