Method of fabrication of low leakage capacitor
作者： Lap Chan , Ting Cheong Ang , John Leonard Sudijono , John Elmslie Martin
DOI:
关键词: High-κ dielectric 、 Leakage (electronics) 、 Materials science 、 Ceramic capacitor 、 Vacuum variable capacitor 、 Electrical engineering 、 Dielectric absorption 、 Gate dielectric 、 Optoelectronics 、 Capacitor 、 Tantalum capacitor
摘要: A capacitor element of a semiconductor device used for high density circuits is formed by the steps forming bottom plate capacitor, submitting top to plasma treatment in an oxidizing medium where nitrogen and oxygen are present, depositing dielectric layer present. Various materials While present invention uses amorphous silicon as material, can readily applied number other materials. The objective constructing capacitors reduce thickness material much possible use which has constant, this increases value electrical charge be carried capacitor. eliminate leakage current between plates so that maintain voltage plate.
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