Even nucleation between silicon and oxide surfaces for thin silicon nitride film growth
作者： Er-Xuan Ping
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摘要: A method of providing even nucleation between silicon and oxide surfaces for growing uniformly thin nitride layers used in semiconductor devices. First, a nonconductive nitride-nucleation enhancing monolayer is formed over assembly having both nitridation receptive resistive materials. For purposes the present invention, material that will readily accept bonding nitrogen atoms to itself. Next, layer monolayer. The provides nitride, thereby allowing growth layer.
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