Method for fabricating reliable metallization with Ta-Si-N barrier for semiconductors
作者： Ratan K. Choudhury
DOI:
关键词: Ohmic contact 、 Silicon nitride 、 Etching (microfabrication) 、 Sputtering 、 Layer (electronics) 、 Silicon 、 Electronic engineering 、 Optoelectronics 、 Barrier layer 、 Tantalum 、 Materials science
摘要: A method for manufacturing an ohmic contact on a semiconductor device, as disclosed herein, includes first step of etching via through non-conductive layer formed over partially fabricated version the device. This exposes region device element such source, gate electrode, etc. Next, including tantalum and silicon is deposited in vias by sputtering argon atmosphere. Thereafter, same processing apparatus, barrier nitride layer. Then aluminum alloy metallization directly at temperature least 650° C. At this deposition temperature, conformally fills via, thereby producing stable, uniform contact.
lens.org 参考文章(21)
Yuk L. Tsang, Mohamed O. Aboelfotoh, Process for making a contact structure including polysilicon and metal alloys ,(1987)
Atsushi Hachisuka, Yoshinori Okumura, Semiconductor device having contact between wiring layer and impurity region ,(1992)
Franz Neppl, Ulrich Schwabe, Integrated semiconductor circuit having an external contacting track level consisting of aluminum or of an aluminum alloy ,(1984)
Gregory C. Smith, Method of forming composite interconnect system ,(1992)
Madhukar B. Vora, Michael E. Thomas, Ashok K. Kapoor, Method and structure for inhibiting dopant out-diffusion ,(1984)
Stanley Wolf, Richard N. Tauber, Silicon Processing for the VLSI Era ,(1986)
Krishna Shankar, Ram Ramani, Multilayer interconnection for integrated circuit structure having two or more conductive metal layers ,(1987)
Pijush Bhattacharya, Scott R. Summerfelt, Yasushiro Nishioka, Kyung-ho Park, Method of forming high-dielectric-constant material electrodes comprising sidewall spacers ,(1994)
Gregory Hindman, Jack Berg, N. Manos Ii Peter, Ti/TiN/Ti contact metallization ,(1992)