Method and structure for inhibiting dopant out-diffusion
作者： Madhukar B. Vora , Michael E. Thomas , Ashok K. Kapoor
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摘要: A method for inhibiting out-diffusion of dopants from polycrystalline or single crystal silicon substrates high speed semiconductor devices into metal silicide conductive layers disposed on the substrate comprises interposing a refractory nitride layer between doped and layer. Dopant is further retarded, contact resistance lowered, by adding thin substrate.
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