作者: Ranran Su , Hongliang Zhang , Xiangpeng Meng , Liqun Shi , Chaozhuo Liu
DOI: 10.1016/J.FUSENGDES.2017.04.129
关键词: Optoelectronics 、 Sputter deposition 、 Crystallite 、 Thin film 、 Impurity 、 Deposition (phase transition) 、 Substrate (electronics) 、 Phase (matter) 、 Materials science 、 Sputtering 、 Mechanical engineering 、 General Materials Science 、 Nuclear Energy and Engineering 、 Civil and Structural Engineering
摘要: Abstract Cr2AlC thin films are deposited on MgO (100) and Al2O3 (0001) substrates with reactive radio frequency (RF) magnetron sputtering for the first time. Single phase synthesized at a substrate temperature of 480 °C deposition power 70W, preferred orientation. The film is polycrystalline dense microstructure. orientation disappears AlCr2 impurity emerges as rise during deposition. When 90 W or higher, becomes totally due to C loss. stable in vacuum temperatures up 700 °C, but starts decompose into Cr7C3 800 °C.