Raman study of strain relaxation in Ge on Si

摘要: Strain in thin Ge layers grown by molecular beam epitaxy on (100) Si is measured a Raman technique. When the average thickness 7 monoatomic (ML), results show that layer almost coherent to lattice. The strain begins decrease at an of 10 ML, i.e., critical dislocation generation ML. On other hand, relaxation 5 according reflection high‐energy electron diffraction observation during growth. This initial stage due deformation islands and not formation. for thicker with increasing thickness, misfit decreases gradually but more rapidly than predicted theory Matthews Blakeslee .