Study of strain in partially relaxed Ge epilayers on Si(100) substrate
作者： Z. M. Jiang , C. W. Pei , X. F. Zhou , W. R. Jiang , B. Shi
DOI: 10.1063/1.124378
关键词:
摘要: Ge epilayers of different thicknesses are grown by molecular-beam epitaxy with Sb as a surfactant on Si(100) substrates. X-ray diffraction illustrates that these thin films partially strained, and the strains decrease gradually increasing epilayer thickness. Raman spectra reveal downward shift Ge–Ge mode peak thickness increases. In regions high strain, relationship between this strain in relaxed samples is considerably from linear reported before, which mainly attributed to spatial confinement effect phonons nanocrystal.
scitation.org
harvard.edu
aip.org
sci-hub.se 参考文章(10)
Masaya Ichimura, Akira Usami, Akihiro Wakahara, Akio Sasaki, Raman study of strain relaxation in Ge on Si Journal of Applied Physics. ,vol. 77, pp. 5144- 5148 ,(1995) , 10.1063/1.359258
E Friess, R Schorer, K Eberl, G Abstreiter, Stability and interdiffusion of short-period Si/Ge strained layer superlattices Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. ,vol. 9, pp. 2045- 2047 ,(1991) , 10.1116/1.585774
K. D. Hobart, D. J. Godbey, P. E. Thompson, D. S. Simons, Sb surface segregation and doping in Si(100) grown at reduced temperature by molecular beam epitaxy Applied Physics Letters. ,vol. 63, pp. 1381- 1383 ,(1993) , 10.1063/1.109683
JMC Thornton, AA Williams, John Emyr MacDonald, RG Van Silfhout, JF Van der Veen, M Finney, C Norris, The influence of Sb as a surfactant on the strain relaxation of Ge/Si(001) Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. ,vol. 9, pp. 2146- 2149 ,(1991) , 10.1116/1.585754
Takahisa Ohno, Site exchange mechanism in surfactant-mediated epitaxial growth. Physical Review Letters. ,vol. 73, pp. 460- 463 ,(1994) , 10.1103/PHYSREVLETT.73.460
Jian Zi, H. Büscher, C. Falter, W. Ludwig, Kaiming Zhang, Xide Xie, Raman shifts in Si nanocrystals Applied Physics Letters. ,vol. 69, pp. 200- 202 ,(1996) , 10.1063/1.117371
B. Dietrich, E. Bugiel, J. Klatt, G. Lippert, T. Morgenstern, H. J. Osten, P. Zaumseil, Measurement of stress and relaxation in Si1−xGex layers by Raman line shift and x‐ray diffraction Journal of Applied Physics. ,vol. 74, pp. 3177- 3180 ,(1993) , 10.1063/1.354587
F. Cerdeira, A. Pinczuk, J. C. Bean, B. Batlogg, B. A. Wilson, Raman scattering from GexSi1−x/Si strained‐layer superlattices Applied Physics Letters. ,vol. 45, pp. 1138- 1140 ,(1984) , 10.1063/1.95014
M. Copel, M. C. Reuter, M. Horn von Hoegen, R. M. Tromp, Influence of surfactants in Ge and Si epitaxy on Si(001). Physical Review B. ,vol. 42, pp. 11682- 11689 ,(1990) , 10.1103/PHYSREVB.42.11682
Zuimin Jiang, Amei Xu, Dongzhi Hu, Haijun Zhu, Xiaohan Liu, Xingjun Wang, Mingchun Mao, Xiangjiu Zhang, Jihuang Hu, Daming Huang, Xun Wang, None, Effect of Sb as a surfactant on the inner diffusion of epilayer Ge atoms into Si substrate Thin Solid Films. ,vol. 321, pp. 116- 119 ,(1998) , 10.1016/S0040-6090(98)00458-1