Sb-surfactant mediated growth of Ge nanostructures

摘要: This paper reports the AFM and HREM study of Sb surfactant mediated growth Ge on Si(0 0 1). We show that very dense self-organised dots small lateral dimensions can be grown by using a sub-monolayer coverage 1) in transient regime between 2D nucleation step flow. The dramatic change induced is attributed to both kinetic thermodynamic effects. Indeed, observations evidence mainly two phenomena: close-packing ultra-small islands indicating lower surface diffusion presence mono-modal island shape size strongly differs from bimodal huts' domes' commonly observed without Sb. Morphological microstructural features formed with are studied differences facets aspect ratio exhibited. Moreover, at temperature (in regime, T g ≤ 350 °C), delay 3D defect free flat layers up thicknesses 18 A. At higher temperature, pure flow ∼ 750 °C) large, well separated dome' partially relaxed dislocation their edges obtained. Such similar those obtained coverage. complete desorption rich T> 720 °C explains this result. which improves understanding formation promising for fabrication quantum devices require highly homogeneous sizes MOSFET heterostructures strained SiGe n-channel abrupt interfaces.