Advances in the growth and characterization of Ge quantum dots and islands
作者： J-M. Baribeau , N.L. Rowell , D.J. Lockwood
关键词:
摘要: We review recent advances in the growth of Si1−xGex islands and Ge dots on (001) Si. first discuss evolution island morphology with coverage effect parameters or post-growth annealing shape dots. outline some structural optical properties assess progress determination their composition strain distribution. Finally, we various approaches currently being investigated to engineer quantum particular control size, density, spatial For example, show how C pre-deposition Si can influence nucleation islands.
core.ac.uk
harvard.edu
springer.com
sci-hub.se 参考文章(178)
A Portavoce, F Volpi, A Ronda, P Gas, I Berbezier, Sb segregation in Si and SiGe: effect on the growth of self-organised Ge dots Thin Solid Films. ,vol. 380, pp. 164- 168 ,(2000) , 10.1016/S0040-6090(00)01494-2
S.Yu. Shiryaev, E.Vesterlund Pedersen, F. Jensen, J.Wulff Petersen, J.Lundsgaard Hansen, A.Nylandsted Larsen, Dislocation patterning — a new tool for spatial manipulation of Ge islands Thin Solid Films. ,vol. 294, pp. 311- 314 ,(1997) , 10.1016/S0040-6090(96)09240-1
G.E. Cirlin, V.G. Talalaev, N.D. Zakharov, V.A. Egorov, P. Werner, Room Temperature Superlinear Power Dependence of Photoluminescence from Defect-Free Si/Ge Quantum Dot Multilayer Structures Physica Status Solidi B-basic Solid State Physics. ,vol. 232, ,(2002) , 10.1002/1521-3951(200207)232:1<R1::AID-PSSB99991>3.0.CO;2-Z
P Boucaud, V Le Thanh, S Sauvage, D Debarre, D Bouchier, J.-M Lourtioz, Photoluminescence of self-assembled Ge dots grown by ultra-high-vacuum chemical vapor deposition Thin Solid Films. ,vol. 336, pp. 240- 243 ,(1998) , 10.1016/S0040-6090(98)01281-4
O. G. Schmidt, C. Lange, K. Eberl, O. Kienzle, F. Ernst, Formation of carbon-induced germanium dots Applied Physics Letters. ,vol. 71, pp. 2340- 2342 ,(1997) , 10.1063/1.120072
A Portavoce, A Ronda, I Berbezier, Sb-surfactant mediated growth of Ge nanostructures Materials Science and Engineering B-advanced Functional Solid-state Materials. ,vol. 89, pp. 205- 210 ,(2002) , 10.1016/S0921-5107(01)00853-4
N Usami, Y Shiraki, Optical investigation of modified Stranski–Krastanov growth mode in the stacking of self-assembled Ge islands Thin Solid Films. ,vol. 369, pp. 108- 111 ,(2000) , 10.1016/S0040-6090(00)00846-4
Frances M Ross, RM Tromp, MC Reuter, Transition States Between Pyramids and Domes During Ge/Si Island Growth Science. ,vol. 286, pp. 1931- 1934 ,(1999) , 10.1126/SCIENCE.286.5446.1931
G. Capellini, M. De Seta, F. Evangelisti, Ge/Si(100) islands: growth dynamics versus growth rate Journal of Applied Physics. ,vol. 93, pp. 291- 295 ,(2003) , 10.1063/1.1527211
J.‐P. Noël, N. L. Rowell, D. C. Houghton, D. D. Perovic, Intense photoluminescence between 1.3 and 1.8 μm from strained Si1−xGex alloys Applied Physics Letters. ,vol. 57, pp. 1037- 1039 ,(1990) , 10.1063/1.103558