Raman scattering from Ge nanostructures grown on Si substrates: Power and limitations
作者： A. V. Kolobov
DOI: 10.1063/1.372279
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摘要: The analysis of Raman spectra obtained for different germanium nanostructures grown on silicon substrates is presented. Comparison these with a spectrum wafer reveals one-to-one correspondence features located around 229, 300, and 435 cm−1. It argued that the peaks observed at frequencies often ascribed to Ge are, in fact, coming from Si substrate. erroneous ascription makes corresponding conclusions incorrect.
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