Post-CMP-Cu deposition and CMP to eliminate surface voids
作者： Sergey D. Lopatin
DOI:
关键词: Core (optical fiber) 、 Materials science 、 Electrical conductor 、 Gate oxide 、 Barrier layer 、 Composite material 、 Layer (electronics) 、 Semiconductor device 、 Conductor 、 Electronic engineering 、 Integrated circuit
摘要: A manufacturing method for an integrated circuit is provided having a semiconductor substrate with device. device dielectric layer formed on the substrate. channel has opening therein. barrier lines opening. seed deposited over and conductor core layer, filling of in layer. The layers are then removed above conductive deposited, any voids or depressions core, subsequently resulting uniform thickness.
lens.org 参考文章(1)
Chen-Hua Yu, Chung-Shi Liu, Method to eliminate dishing of copper interconnects ,(1999)