作者: S. K. Ghose , P. A. Bennett , I. K. Robinson
DOI: 10.1103/PHYSREVB.71.073407
关键词: Silicon 、 Debye–Waller factor 、 Crystallography 、 Diffraction 、 Chemical bond 、 Transition metal 、 X-ray crystallography 、 Covalent bond 、 Materials science 、 Atomic physics 、 Substrate (electronics)
摘要: We present a structure for Au deposited on the Si(111)-7x7 surface at very low coverage obtained by x-ray diffraction. have found adsorbed exclusively faulted side of unit cell. The atoms are to reside in sites which lie above Si and do not cause significant rearrangement covalent bonding network substrate, suggesting they weakly bound. considerable disorder can be modeled strongly anisotropic Debye-Waller factor. From this we extract potential interaction with Si(111) 7x7, is reasonable agreement theoretical predictions other species 7x7.