Effect of boron-doping on the hydrogen evolution from a-Si:H films
作者： W. Beyer , H. Wagner , H. Mell
DOI: 10.1016/0038-1098(81)90694-3
关键词: Materials science 、 Lower temperature 、 Analytical chemistry 、 Decomposition 、 Boron doping 、 Hydrogen content 、 Hydrogen evolution
摘要: Abstract We have found that the hydrogen evolution from boron-doped a-Si:H films prepared by glow-discharge decomposition of silane-diborane mixtures, differs appreciably undoped or phosphorus-doped material. Firstly, peaks in rate are shifted to lower temperature as much 160°C and, secondly, peak position is almost independent film thickness. Differences content also observed. These findings indicate presence strong microstructural inhomogeneities films. Implications this property consistent with recent transport data.
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