A doping‐precipitated morphology in plasma‐depositeda‐Si:H
作者： E. A. Schiff , P. D. Persans , H. Fritzsche , V. Akopyan
DOI: 10.1063/1.92267
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摘要: A grossly inhomogeneous, noncolumnar morphology has been observed in doped, plasma‐deposited hydrogenated amorphous silicon (a‐Si:H) within critical ranges of the diborane to silane ratio gas phase. The level can be as low 5 ppm and depends both on electrode self‐bias potential growth rate. Undoped specimens prepared under same deposition conditions have properties typical device‐grade a‐Si:H. These observations suggest a structural origin for some doping‐dependent
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