作者: Weifeng Li , Xiqi Feng , Chengjun Duan , Jingtai Zhao , Shili Pan
DOI: 10.1088/0022-3727/38/3/005
关键词: Single crystal 、 Absorption spectroscopy 、 Crystal 、 Optoelectronics 、 Band gap 、 Excited state 、 Luminescence 、 Scintillation 、 Analytical chemistry 、 Chemistry 、 Irradiation
摘要: X-ray excited luminescence, optical transmission and irradiation induced absorption spectra thermo-luminescence (TL) have been investigated on a BaBPO5 single crystal. A broad luminescence band of the host is found when by x-radiation, it can be decomposed into two Gaussian components, which are identified presence defect energy levels in gap. Four bands clearly observed UV–VIS wavelength range under excitation x-rays but not UV light. The radiation damage mechanism discussed. These colour centres completely bleached annealing treatment at 150 °C. TL measurements also give proof that there exist structures crystal, corresponding trapping parameters estimated total glow peak method: E = 0.98 ± 0.02 eV S 3.4 × 1012 s−1. proved to first-order kinetics. It interesting crystals could find applications as scintillation material through control intrinsic defects