Device-grade a-SiGe:H alloys prepared by nanometer deposition/H2 plasma annealing method
作者： Jun Xu , Kazutoshi Shiba , Seiichi Miyazaki , Masataka Hirose , Kunji Chen
DOI: 10.1016/0022-3093(95)00767-9
关键词: Materials science 、 Photosensitivity 、 Analytical chemistry 、 Plasma 、 Band gap 、 Annealing (metallurgy) 、 Photoconductivity 、 Luminescence 、 Amorphous solid 、 Doping
摘要: Abstract Hydrogenated amorphous silicon-germanium (a-SiGe:H) alloys are fabricated by alternately repeating a 3 nm thick a-SiGe:H deposition and subsequent hydrogen plasma annealing at various rf power densities substrate temperatures. The bonded-hydrogen content decreases with increasing density or temperature. It is found that the hydrogen-annealed films an optical bandgap of 1.45–1.52 eV exhibit high photoconductivity (> 10 −5 S/cm) under AM1 light (100 mW/cm 2 ) illumination photosensitivity 4 ). A significant reduction gap states due to also suggested from luminescence properties as well substitutional doping efficiency.
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