MOCVD of GaN Using Diethylgalliumazide and Ammonia
作者： Kwok-L. Ho , Klavs F. Jensen , Jen-W. Hwang , John F. Evans , Wayne L. Gladfelter
DOI: 10.1557/PROC-204-101
关键词: Sapphire 、 Chemical vapor deposition 、 Atmospheric temperature range 、 Growth rate 、 Ammonia 、 Metalorganic vapour phase epitaxy 、 Chemical engineering 、 Materials science 、 Morphology (linguistics) 、 Thin film
摘要: GaN thin films have been deposited on Si and sapphire substrates by metalorganic chemical vapor deposition (MOCVD) using diethylgalliumazide ammonia. Films were grown in the temperature range of 500-750°C. Growth rates monitored situ laser interferometry. The addition ammonia enhanced growth rate significantly. At high temperatures, gas-phase depletion precursor reduced GaN. (0001)-oriented at temperatures above 650°C highly textured with smooth surface morphology. Optical electrical properties are discussed compared to those conventional Ga N sources.
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