High permittivity gate insulators TiO2 and ZrO2

M. Gribelyuk , W. L. Gladfelter , N. Hoilien , S. A. Campbell
Proceedings of the 1999 13th Biennial University / Goverment / Industry Microelectronics Symposium (UGIM) 33 -36

1
1999
5
1988
Preparation and Structural Characterization of [(Ph3P)2N][HFeRu3(CO)13] and [(Ph3P)2N][HFe2Ru2(CO)13]

F. Takusagawa , A. Fumagalli , T. F. Koetzle , G. R. Steinmetz
Inorganic Chemistry 20 ( 11) 3823 -3828

13
1981
Deposition of hafnium oxide from Hf t-butoxide and nitric oxide

Z. Zhang , B. Xia , W. L. Gladfelter , S. A. Campbell
Journal of Vacuum Science and Technology 24 ( 3) 418 -423

5
2006
Structural and dielectric properties of Ba0.5Sr0.5TiO3 thin films with an epi-RuO2 bottom electrode

Q. X. Jia , A. T. Findikoiglu , R. Zhou , S. R. Foltyn
Integrated Ferroelectrics 19 111 -119

14
1998
Grafting of High-Density Poly(Ethylene Glycol) Monolayers on Si(111)

X.-Y. Zhu , Y. Jun , D. R. Staarup , R. C. Major
Langmuir 17 ( 25) 7798 -7803

148
2001
Group IVB Oxides as High Permittivity Gate Insulators

S. A. Campbell , B. He , R. Smith , T. Ma
MRS Proceedings 606 ( 1) 23 -32

2
1999
A variable temperature x‐ray photoelectron spectroscopic study of the surface conversion of diethylaluminum azide to AlN

R. K. Schulze , D. C. Boyd , J. F. Evans , W. L. Gladfelter
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 8 ( 3) 2338 -2343

22
1990
Ultrahigh vacuum metalorganic chemical vapor deposition growth and in situ characterization of epitaxial TiO2 films

Samuel Chen , M. G. Mason , H. J. Gysling , G. R. Paz‐Pujalt
Journal of Vacuum Science and Technology 11 ( 5) 2419 -2429

125
1993
Microstructure of Al contacts on GaAs

I. Karpov , A. Franciosi , C. Taylor , J. Roberts
Applied Physics Letters 71 ( 21) 3090 -3092

5
1997
RuO2/Ru electrode on Si3N4/Si substrate for microelectromechanical systems devices based on Pb(Zr1-xTix)O3 film and surface micromachining

Y. S. Yoon , J. H. Kim , A. M. Schimidt , D. L. Polla
Journal of Materials Science: Materials in Electronics 9 ( 6) 465 -471

9
1998
Low temperature chemical vapor deposition of titanium dioxide thin films using tetranitratotitanium (IV)

D. C. Gilmer , W. L. Gladfelter , D. G. Colombo , C. J. Taylor
MRS Proceedings 495 45 -50

1997
New Precursor Routes to Nanocrystalline Cubic/Hexagonal Gallium Nitride, GaN.

R. L. Wells , J. F. Janik , W. L. Gladfelter , J. L. Coffer
MRS Proceedings 468 39 -44

6
1997
NANOTRIBOLOGY ON A POLYMER NETWORK FILM

G. Haugstad , W. L. Gladfelter , R. R. Jones
Journal of Vacuum Science and Technology 14 ( 3) 1864 -1869

13
1996
Electrical and material characterizations of high-permittivity HfxTi1−xO2 gate insulators

M. Li , Z. Zhang , S. A. Campbell , W. L. Gladfelter
Journal of Applied Physics 98 ( 5) 054506

45
2005
Heteroepitaxial growth of AlAs using dimethylethylamine alane as an Al precursor

K. M. Chen , T. Castro , A. Franciosi , W. L. Gladfelter
Applied Physics Letters 60 ( 17) 2132 -2134

10
1992
A binuclear nickel(II) encapsulating agent for chloride and bromide ions

W. L. Gladfelter , Harry B. Gray
Journal of the American Chemical Society 102 ( 18) 5909 -5910

9
1980
Titanium dioxide (TiO 2 )-based gate insulators

S. A. Campbell , H.-S. Kim , D. C. Gilmer , B. He
Ibm Journal of Research and Development 43 ( 3) 383 -392

281
1999
UHV-MOCVD growth and in situ characterization of epitaxial TiO2 films

Samuel Chen , H. J. Gysling , G. R. Paz-Pujalt , T. N. Blanton
MRS Proceedings 280 173 -178

1992