Deposition of hafnium oxide from Hf t-butoxide and nitric oxide

摘要: The high-κ stack consisting of an optional nitride interfacial layer and a HfO2 was studied. result shows that or oxynitride layers can be controllably formed down to few angstroms. growth both is self-limited. introduction nitric oxide with hafnium t-butoxide during the deposition leads smaller effective thickness (EOT) gate leakage current. EOTs below 1.0nm have been achieved this combination sources. beneficial effect explained in terms reduced EOT, reduction carbon contamination, possibly small trace amount nitrogen incorporation.