New Precursor Routes to Nanocrystalline Cubic/Hexagonal Gallium Nitride, GaN.

摘要: Abstract : Two precursor routes culminating in bulk nanocrystalline gallium nitride materials are reported, with emphasis on the XRD/crystalline features and photoluminescence (PL). First, new imide, Ga(NH)3/2n can be converted to nanocrystalline, cubic/hexagonal GaN ranging color from yellow light gray. Second, a route gallazane, H2GaNH2x, combination of LiGaH4 NH4X (X = Cl, Br) Et(2)O is shown result material that slowly converts polymeric solid via H2 NH3 elimination condensation pathways. Both gallazane pyrolyzed dark gray nanocrystyalline, phase-inhomogeneous as above. Specific variations pyrolysis conditions enable some control over particle nanosize degree crystalline phase-inhomogeneity materials. These nanophase have also been characterized by room temperature measurements. In general, observed emission spectra strongly dependent typically exhibit weak defect green emission. While as-prepared does not band-edge PL, brief hydrofluoric acid etch yields exhibiting an intense blue-emitting PL spectrum maximum near 420 nm.