High permittivity gate insulators TiO2 and ZrO2
作者： M. Gribelyuk , W. L. Gladfelter , N. Hoilien , S. A. Campbell , T. Ma
DOI:
关键词:
摘要:
参考文章(2)
D. J. DiMaria, J. H. Stathis, Ultimate limit for defect generation in ultra-thin silicon dioxide Applied Physics Letters. ,vol. 71, pp. 3230- 3232 ,(1997) , 10.1063/1.120299
D. A. Buchanan, S. H. Lo, GROWTH, CHARACTERIZATION AND THE LIMITS OF ULTRATHIN SiO,-BASED DIELECTRICS FOR FUTURE CMOS APPLICATIONS ,(1996)