Effects of aluminum doping on lanthanum oxide gate dielectric films
作者： Hei Wong , B.L. Yang , K. Kakushima , P. Ahmet , H. Iwai
DOI: 10.1016/J.VACUUM.2011.06.023
关键词: Lanthanum oxide 、 Lanthanum 、 Gate dielectric 、 Substrate (electronics) 、 Gate oxide 、 Chemical engineering 、 Inorganic chemistry 、 Lanthanum aluminate 、 Oxide 、 Lanthanum aluminate-strontium titanate interface 、 Materials science
摘要: Abstract This work reports a novel method for improving the electrical properties of lanthanum gate oxide (La 2 O 3 ) by using aluminum doping and rapid thermal annealing (RTA) techniques. In bulk Al-doped La film together with 600 °C RTA, we found that atoms were incorporated into network was transformed aluminate complex oxide. At interface, thin Al layer formed. interfacial suppressed out-diffusion substrate Si, formation silicate silicide bonds. These effects resulted in significant reduction on interface trap densities hence leakage current.
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