Population inversion and threshold current densities: A comparison of GaAs∕(Al,Ga)As quantum-cascade structures with different barrier heights
作者： L. Schrottke , S. L. Lu , R. Hey , M. Giehler , H. Kostial
DOI: 10.1063/1.1929863
关键词:
摘要: The population of the laser levels in undoped GaAs∕AlxGa1−xAs quantum-cascade structures (QCSs) is investigated by interband photoluminescence spectroscopy. We compare similar QCSs with different barrier heights (x=0.33 and x=0.45), for which calculated ratios ρpca are equal. While experimental value ρpme x=0.45 agrees theoretical one, x=0.33 much smaller than ρpca. At same time, threshold current densities jth significantly x=0.33. In framework a linear rate equation model, we estimate effect experimentally observed reduction ratio on jth. show that increased cannot only be attributed to larger leakage due lower barriers, but also reduced ratio.
harvard.edu
scitation.org
aip.org
sci-hub.se 参考文章(12)
Carlo Sirtori, Peter Kruck, Stefano Barbieri, Philippe Collot, Julien Nagle, Mattias Beck, Jérôme Faist, Ursula Oesterle, GaAs/AlxGa1−xAs quantum cascade lasers Applied Physics Letters. ,vol. 73, pp. 3486- 3488 ,(1998) , 10.1063/1.122812
Stefano Barbieri, Carlo Sirtori, Hideaky Page, Max Stellmacher, Julien Nagle, Design strategies for GaAs-based unipolar lasers: Optimum injector-active region coupling via resonant tunneling Applied Physics Letters. ,vol. 78, pp. 282- 284 ,(2001) , 10.1063/1.1332105
P. Enders, A. Bärwolff, M. Woerner, D. Suisky, k ⋅ p theory of energy bands, wave functions, and optical selection rules in strained tetrahedral semiconductors Physical Review B. ,vol. 51, pp. 16695- 16704 ,(1995) , 10.1103/PHYSREVB.51.16695
L. R. Wilson, P. T. Keightley, J. W. Cockburn, M. S. Skolnick, J. C. Clark, R. Grey, G. Hill, Controlling the performance of GaAs–AlGaAs quantum-cascade lasers via barrier height modifications Applied Physics Letters. ,vol. 76, pp. 801- 803 ,(2000) , 10.1063/1.125589
S. Anders, W. Schrenk, E. Gornik, G. Strasser, Room-temperature emission of GaAs/AlGaAs superlattice quantum-cascade lasers at 12.6 μm Applied Physics Letters. ,vol. 80, pp. 1864- 1866 ,(2002) , 10.1063/1.1461055
L. Schrottke, R. Hey, H. T. Grahn, Direct observation of laser level occupation and injector coupling in undoped GaAs/(Al,Ga)As quantum-cascade structures Applied Physics Letters. ,vol. 84, pp. 4535- 4537 ,(2004) , 10.1063/1.1758774
H. Page, C. Becker, A. Robertson, G. Glastre, V. Ortiz, C. Sirtori, 300 K operation of a GaAs-based quantum-cascade laser at λ≈9 μm Applied Physics Letters. ,vol. 78, pp. 3529- 3531 ,(2001) , 10.1063/1.1374520
S. L. Lu, L. Schrottke, R. Hey, H. Kostial, H. T. Grahn, Negative differential conductance and current bistability in undoped GaAs∕(Al,Ga)As quantum-cascade structures Journal of Applied Physics. ,vol. 97, pp. 023701- ,(2005) , 10.1063/1.1828603
Felix Eickemeyer, K Reimann, M Woerner, T Elsaesser, S Barbieri, C Sirtori, G Strasser, T Müller, R Bratschitsch, K Unterrainer, None, Ultrafast coherent electron transport in semiconductor quantum cascade structures Physical Review Letters. ,vol. 89, pp. 047402- ,(2002) , 10.1103/PHYSREVLETT.89.047402
M. Giehler, R. Hey, H. Kostial, S. Cronenberg, T. Ohtsuka, L. Schrottke, H. T. Grahn, Lasing properties of GaAs/(Al,Ga)As quantum-cascade lasers as a function of injector doping density Applied Physics Letters. ,vol. 82, pp. 671- 673 ,(2003) , 10.1063/1.1541099