80-GHz Tuned Amplifier in Bulk CMOS
作者： Ning Zhang , Chih-Ming Hung , K.O. Kenneth
关键词: Power gain 、 CMOS 、 Transistor 、 Materials science 、 Tuned amplifier 、 NMOS logic 、 Amplifier 、 Electrical engineering 、 W band 、 Noise figure
摘要: An 80-GHz six-stage common source tuned amplifier has been demonstrated using low leakage (higher VT) NMOS transistors of a 65-nm digital CMOS process with six metal levels. It achieves power gain 12 dB at 80 GHz 3-dB bandwidth 6 GHz, noise figures (NF's) lower than 10.5 frequencies between 75 and 81 the lowest NF 9 dB. IP1 is -21 dBm IIP3 -11.5 dBm. The consumes 27 mA from 1.2 V supply. At VDD = 1.5 33 bias current, less 9.5 within reaches minimum 8 GHz.
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