A 19.2 mW, ${> 45}~{\rm dB}$ Gain and High-Selectivity 94 GHz LNA in 0.13 $\mu{\rm m}$ SiGe BiCMOS
作者： Xiaojun Bi , Yongxin Guo , Yong Zhong Xiong , Muthukumaraswamy Annamalai Arasu , Minkyu Je
DOI: 10.1109/LMWC.2013.2251620
关键词:
摘要: In this letter, a high-gain and selectivity W-band LNA using 0.13 $\mu{\rm m}$ SiGe BiCMOS is proposed. A Q-enhanced cascode approach with filter synthesis passband-forming technique was employed to achieve gain improvement simultaneously. The amplifier achieved of above 45 dB noise figure 6–8.3 at 77–101 GHz power consumption 19.2 mW. has high 3 dB-to-35 shape factor 2.1, which comparable silicon-based passive millimeter-wave filters.
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