$D$ -Band Total Power Radiometer Performance Optimization in an SiGe HBT Technology
作者： E. Dacquay , A. Tomkins , K. H. K. Yau , E. Laskin , Pascal Chevalier
DOI: 10.1109/TMTT.2012.2184132
关键词: Noise figure 、 Responsivity 、 Heterojunction bipolar transistor 、 Noise-equivalent power 、 Physics 、 Radiometer 、 Optoelectronics 、 Electrical engineering 、 D band 、 Amplifier 、 Noise temperature
摘要: A D-band SiGe HBT total power radiometer is reported with a peak responsivity of 28 MV/W, noise equivalent (NEP) 14-18 fW/Hz1/2, and temperature resolution better than 0.35 K for an integration time 3.125 ms. The 1/f corner the lower 200 Hz. Fabricated in developmental technology 270-GHz fT 330-GHz/max, it includes five-stage low-noise amplifier (LNA) 4-7-GHz bandwidth over 35 dB gain centered at 165 GHz, along square-law detector NEP below 6 pW/Hz1/2 up to 170 GHz. An average system 1645 obtained using Y-factor method 10 GHz calculated from measured S21(f) characteristics radiometer. reduced frequency presence amplifier, compared that detector, appears indicate that, unlike III-V radiometers, LNA fluctuations are not problem radiometers. circuit consumes 95 mW occupies 765 × 490 μm2. Wafer mapping sensitivity was performed across different process splits. results demonstrate can be employed as relatively simple area-efficient transistor noise-measure monitor, useful vertical profile optimization.
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