165-GHz Transceiver in SiGe Technology
作者： Alain Chantre , Bernard Sautreuil , Sorin P. Voinigescu , Ekaterina Laskin , Pascal Chevalier
关键词:
摘要: Two D-band transceivers, with and without amplifiers static frequency divider, transmitting simultaneously in the 80-GHz 160-GHz bands, are fabricated SiGe HBT technology. The transceivers feature an quadrature Colpitts oscillator differential outputs at 160 GHz, a double-balanced Gilbert-cell mixer, 170-GHz broadband 70-GHz to 180-GHz vertically stacked transformers for single-ended conversion. For transceiver which marks highest level of integration above 100 GHz silicon, peak down-conversion gain is -3 dB RF inputs 165 GHz. single-ended, 165-GHz transmitter output generates -3.5 dBm, while 82.5-GHz power +2.5 dBm. This occupies 840 mum times 1365 mum, biased from 3.3 V, consumes 0.9 W. stand-alone 5-stage amplifiers, centered 140 170 were also showing 17 15 respectively. saturated +1 dBm 130 0 All circuits characterized over temperature up 125degC. These results demonstrate first time feasibility BiCMOS technology 100-180-GHz range.
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