作者: Amin Hamidian , Georg Boeck , Viswanathan Subramanian , Zihui Zhang
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摘要: This paper presents a modeling technique for meta-linsulator-metal capacitors up to 140 GHz realized in high performance 0.25 µm SiGe BiCMOS process. The presented is also applicable different semiconductor technologies. Starting from the parasitic effect of capacitor plates until substrate and ground effects, method implemented here includes all significant elements. On-chip coupling elements between have been considered. modeled compared with electromagnetic simulations measurements. results show very good accuracy model millimeter-wave frequencies which makes it quite appropriate circuit design V-band W-band frequencies. As case study, simulation power amplifier designed help this measurement full