作者: Georg Boeck , Viswanathan Subramanian , Wilhelm Keusgen , Van-Hoang Do
DOI: 10.1109/EMICC.2008.4772216
关键词: Heterojunction bipolar transistor 、 Impedance matching 、 Electronic engineering 、 Transistor 、 Digital down converter 、 Design strategy 、 Electrical engineering 、 Wireless communication systems 、 Silicon-germanium 、 Computer science 、 Chipset
摘要: A 60 GHz SiGe HBT chipset for high speed wireless communication systems has been developed. The functionalities of LNA, up-converter, down-converter and PA have realized with good performance. Design strategy, achieved results comparison state-of-the-art work will be presented. proves that single chip integration the whole RF-frond-end possible using silicon based technologies.