Lumped Element MIM capacitor model for Si-RFICs
作者： Daniel Gruner , Zihui Zhang , Viswaathan Subramanian , Falk Korndoerfer , Georg Boeck
DOI: 10.1109/IMOC.2007.4404233
关键词: Curve fitting 、 Element model 、 Electronic engineering 、 Heterojunction bipolar transistor 、 Range (statistics) 、 Distributed element model 、 Element (category theory) 、 Model parameters 、 Capacitor 、 Materials science
摘要: This work describes a lumped element based MIM capacitor model for the frequency range up to 110 GHz. Several capacitors with different areas have been fabricated in five metal layer 0.25 m SiGe HBT technology. All structures analyzed 2.5 D EM simulation environment and simulated results are compared measurements. A valid GHz has developed on curve fitting techniques. Good agreements measurements achieved Finally, extracted parameters suitable entire tabulated.
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