Low-Power, Low-Phase Noise SiGe HBT Static Frequency Divider Topologies up to 100 GHz

作者: E. Laskin , S. Nicolson , P. Chevalier , A. Chantre , B. Sautreuil

DOI: 10.1109/BIPOL.2006.311163

关键词:

摘要: … of the 2 static dividers in the BiCMOS9 and BipX technologies… on the divider without EF fabricated in the BiCMOS9 process. … All dividers were fabricated in the same BiCMOS9 process …

参考文章(8)
P. Chevalier, B. Barbalat, L. Rubaldo, B. Vandelle, D. Dutartre, P. Bouillon, T. Jagueneau, C. Richard, F. Saguin, A. Margain, A. Chantre, 300 GHz f/sub max/ self-aligned SiGeC HBT optimized towards CMOS compatiblity bipolar/bicmos circuits and technology meeting. pp. 120- 123 ,(2005) , 10.1109/BIPOL.2005.1555214
A. Rylyakov, T. Zwick, 96-GHz static frequency divider in SiGe bipolar technology IEEE Journal of Solid-state Circuits. ,vol. 39, pp. 1712- 1715 ,(2004) , 10.1109/JSSC.2004.833562
T.O. Dickson, S.P. Voinigescu, SiGe BiCMOS topologies for low-voltage millimeter-wave voltage controlled oscillators and frequency dividers topical meeting on silicon monolithic integrated circuits in rf systems. pp. 273- 276 ,(2006) , 10.1109/SMIC.2005.1587967
Z. Griffith, Yingda Dong, D. Scott, Yun Wei, N. Parthasarathy, M. Dahlstrom, C. Kadow, V. Paidi, M.J.W. Rodwell, M. Urteaga, R. Pierson, P. Rowell, B. Brar, Sangmin Lee, N.X. Nguyen, C. Nguyen, Transistor and circuit design for 100-200 GHz ICs compound semiconductor integrated circuit symposium. ,vol. 40, pp. 2061- 2069 ,(2004) , 10.1109/JSSC.2005.854609
M. Mokhtari, C. Fields, R.D. Rajavel, M. Sokolich, J.F. Jensen, W.E. Stanchina, 100+ GHz static divide-by-2 circuit in InP-DHBT technology IEEE Journal of Solid-state Circuits. ,vol. 38, pp. 291- 293 ,(2002) , 10.1109/JSSC.2003.815921
J.-O. Plouchart, Jonghae Kim, V. Karam, R. Trzcinski, J. Gross, Performance Variations of a 66GHz Static CML Divider in 90nm CMOS international solid-state circuits conference. pp. 2142- 2151 ,(2006) , 10.1109/ISSCC.2006.1696274
Laurens, Martinet, Kermarrec, Campidelli, Deleglise, Dutarte, Troillard, Gloria, Bonnouvrier, Beerkens, Rousset, Leverd, Chantre, Monroy, A 150GHz f/sub T//f/sub max/ 0.13/spl mu/m SiGe:C BiCMOS technology bipolar/bicmos circuits and technology meeting. pp. 199- 202 ,(2003) , 10.1109/BIPOL.2003.1274965
S. Trotta, H. Knapp, T.F. Meister, K. Aufinger, J. Bock, W. Simburger, A.L. Scholtz, 110-GHz static frequency divider in SiGe bipolar technology compound semiconductor integrated circuit symposium. pp. 291- 294 ,(2005) , 10.1109/CSICS.2005.1576599