High-Speed SiGe BiCMOS Technologies: 120-nm Status and End-of-Roadmap Challenges
作者： P. Chevalier , B. Barbalat , M. Laurens , B. Vandelle , L. Rubaldo
关键词:
摘要: This paper presents the status of high-speed SiGe BiCMOS technologies at STMicroelectronics. Process and electrical characteristics two 120-nm platforms, qualified or under development, are presented together with results demonstrated on optical millimeter-wave circuits. Advanced developments addressing end-of-roadmap also discussed
toronto.edu
archives-ouvertes.fr
utoronto.ca 
researchgate.net 
sci-hub.se 参考文章(16)
B. Martinet, F. Romagna, O. Kermarrec, Y. Campidelli, F. Saguin, H. Baudry, M. Marty, D. Dutartre, A. Chantre, An investigation of the static and dynamic characteristics of high speed SiGe:C HBTs using a poly-SiGe emitter bipolar/bicmos circuits and technology meeting. pp. 147- 150 ,(2002) , 10.1109/BIPOL.2002.1042906
S. T. Nicolson, K.h.k Yau, K.a. Tang, P. Chevalier, A. Chantre, B. Sautreuil, S. P. Voinigescu, Design and Scaling of SiGe BiCMOS VCOs Above 100GHz bipolar/bicmos circuits and technology meeting. pp. 1- 4 ,(2006) , 10.1109/BIPOL.2006.311135
T.O. Dickson, E. Laskin, I. Khalid, R. Beerkens, Jingqiong Xie, B. Karajica, S.P. Voinigescu, An 80-Gb/s 2/sup 31/-1 pseudorandom binary sequence generator in SiGe BiCMOS technology IEEE Journal of Solid-state Circuits. ,vol. 40, pp. 2735- 2745 ,(2005) , 10.1109/JSSC.2005.856578
A. Chantre, F. Aniel, N. Zerounian, D. Dutartre, F. Saguin, F. Saguin, B. Vandelle, G. Borot, C. Richard, M. Proust, P. Chevalier, L. Rubaldo, F. Judong, B. Barbalat, Experimental Study of Metallic Emitter SiGeC HBTs bipolar/bicmos circuits and technology meeting. pp. 1- 4 ,(2006) , 10.1109/BIPOL.2006.311166
E. Laskin, S. Nicolson, P. Chevalier, A. Chantre, B. Sautreuil, S. Voinigescu, Low-Power, Low-Phase Noise SiGe HBT Static Frequency Divider Topologies up to 100 GHz bipolar/bicmos circuits and technology meeting. pp. 1- 4 ,(2006) , 10.1109/BIPOL.2006.311163
P. Chevalier, D. Gloria, P. Scheer, S. Pruvost, F. Gianesello, F. Pourchon, P. Garcia, J.-c. Vildeuil, A. Chantre, C. Garnier, O. Noblanc, S.P. Voinigescu, T.O. Dickson, E. Laskin, S.T. Nicolson, T. Chalvatzis, K.h.k. Yau, Advanced SiGe BiCMOS and CMOS platforms for Optical and Millimeter-Wave Integrated Circuits compound semiconductor integrated circuit symposium. pp. 12- 15 ,(2006) , 10.1109/CSICS.2006.319906
P. Chevalier, B. Barbalat, L. Rubaldo, B. Vandelle, D. Dutartre, P. Bouillon, T. Jagueneau, C. Richard, F. Saguin, A. Margain, A. Chantre, 300 GHz f/sub max/ self-aligned SiGeC HBT optimized towards CMOS compatiblity bipolar/bicmos circuits and technology meeting. pp. 120- 123 ,(2005) , 10.1109/BIPOL.2005.1555214
B. Barbalat, T. Schwartzmann, P. Chevalier, B. Vandelle, L. Rubaldo, F. Saguin, N. Zerounian, F. Aniel, A. Chantre, Carbon effect on neutral base recombination in high-speed SiGeC HBTs international sige technology and device meeting. pp. 1- 2 ,(2006) , 10.1109/ISTDM.2006.246546
P. Chevalier, C. Fellous, L. Rubaldo, F. Pourchon, S. Pruvost, R. Beerkens, F. Saguin, N. Zerounian, B. Barbalat, S. Lepilliet, D. Dutartre, D. Celi, I. Telliez, D. Gloria, F. Aniel, F. Danneville, A. Chantre, 230-GHz self-aligned SiGeC HBT for optical and millimeter-wave applications IEEE Journal of Solid-state Circuits. ,vol. 40, pp. 2025- 2034 ,(2005) , 10.1109/JSSC.2005.852846
R. Krithivasan, Yuan Lu, J.D. Cressler, Jae-Sung Rieh, M.H. Khater, D. Ahlgren, G. Freeman, Half-terahertz operation of SiGe HBTs IEEE Electron Device Letters. ,vol. 27, pp. 567- 569 ,(2006) , 10.1109/LED.2006.876298