An investigation of the static and dynamic characteristics of high speed SiGe:C HBTs using a poly-SiGe emitter
作者： B. Martinet , F. Romagna , O. Kermarrec , Y. Campidelli , F. Saguin
DOI: 10.1109/BIPOL.2002.1042906
关键词:
摘要: … the development of a very high speed SiGe:C HBT [3]. The … to the SiGe HBT integrated in STBiCMOS7 (0.25pm SiGe … for the SiGe:C base, which is grown using non selective epitaxy. …
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