Base current tuning in SiGe HBT's by SiGe in the emitter
作者： H.G.A. Huizing , J.H. Klootwijk , E. Aksen , J.W. Slotboom
关键词: Heterojunction bipolar transistor 、 Bipolar junction transistor 、 Common emitter 、 Voltage 、 Breakdown voltage 、 Heterojunction 、 Materials science 、 Optoelectronics 、 Heterostructure-emitter bipolar transistor 、 Current injection technique
摘要: Npn-type SiGe heterojunction bipolar transistors (HBT's) have high cut-off frequencies, but low breakdown voltages due to their current gain. We show that a layer in the emitter can increase base and hence voltage while collector frequency are not reduced. Simulations first experimental results clearly confirm this effect.
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