Modeling of SiGe spike mono emitter HBT with HICUM in static and dynamic operations
作者： Arkaprava Bhattacharyya , C Maneux , S Fregonese , Thomas Zimmer , None
DOI: 10.1109/BCTM.2011.6082748
关键词:
摘要: In this paper, simulation and modeling results for a npn SiGe spike mono emitter transistor are presented covering both DC frequency operations. First, the obtained compared with conventional HBT. Then model parameter extraction help of HICUM is performed in simulated data new device. The accurate compact introduces recombination time constant inside existing HICUML2.24 model. Modeling extended indicate good agreement not only characteristics but also dynamic behavior.
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sci-hub.se 参考文章(4)
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