Gain-enhanced 132-160 GHz low-noise amplifier using 0.13 μm SiGe BiCMOS
作者： Bo Zhang , Yong-Zhong Xiong , Lei Wang , Sangming Hu , Le-Wei Li
DOI: 10.1049/EL.2011.3882
关键词:
摘要: … ‘High-speed SiGe BiCMOS technologies: 120-nm status and end-ofroadmap challenges’. IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, Long Beach, CA…
harvard.edu
aip.org
sci-hub.se 参考文章(7)
S. M. Sze, High-speed semiconductor devices New York. ,(1990)
P. Chevalier, B. Barbalat, M. Laurens, B. Vandelle, L. Rubaldo, B. Geynet, S.P. Voinigescu, T.O. Dickson, N. Zerounian, S. Chouteau, D. Dutartre, A. Monroy, F. Aniel, G. Dambrine, A. Chantre, High-Speed SiGe BiCMOS Technologies: 120-nm Status and End-of-Roadmap Challenges topical meeting on silicon monolithic integrated circuits in rf systems. pp. 18- 23 ,(2007) , 10.1109/SMIC.2007.322759
Y.Z. Xiong, On-chip transformer-based feedback CMOS power oscillator Electronics Letters. ,vol. 41, pp. 135- 137 ,(2005) , 10.1049/EL:20057857
A.Y.-K. Chen, Y. Baeyens, Y.-K. Chen, J. Lin, 21 dB gain 87 low-noise amplifier using 0.18μm SiGe BiCMOS Electronics Letters. ,vol. 46, pp. 332- 333 ,(2010) , 10.1049/EL.2010.0155
Bo-Jr Huang, Kun-You Lin, Huei Wang, Millimeter-Wave Low Power and Miniature CMOS Multicascode Low-Noise Amplifiers with Noise Reduction Topology IEEE Transactions on Microwave Theory and Techniques. ,vol. 57, pp. 3049- 3059 ,(2009) , 10.1109/TMTT.2009.2033238
J. Powell, H. Kim, C.G. Sodini, SiGe Receiver Front Ends for Millimeter-Wave Passive Imaging IEEE Transactions on Microwave Theory and Techniques. ,vol. 56, pp. 2416- 2425 ,(2008) , 10.1109/TMTT.2008.2006103
Dan Sandstrom, Mikko Varonen, Mikko Karkkainen, Kari A. I. Halonen, W-Band CMOS Amplifiers Achieving $+$10 dBm Saturated Output Power and 7.5 dB NF IEEE Journal of Solid-state Circuits. ,vol. 44, pp. 3403- 3409 ,(2009) , 10.1109/JSSC.2009.2032274