THz Direct Detector and Heterodyne Receiver Arrays in Silicon Nanoscale Technologies

摘要: The main scope of this paper is to address various implementation aspects THz detector arrays in the nanoscale silicon technologies operating at room temperatures. This includes operation single detectors, detectors operated parallel (arrays), and a video-camera mode with an internal reset support continuous-wave illumination without need synchronize source camera (no lock-in receiver required). A systematic overview advantages limitations using for applications given. on-chip antenna design challenges co-design active circuitry are thoroughly analyzed broadband detector/receiver operation. summary state-of-the-art direct based on two different principles presented. first non-quasistatic resistive mixing process MOSFET channel, whereas other relies signal rectification by nonlinearity base-emitter junction high-speed SiGe heterojunction bipolar transistor (HBT). For implemented 65 nm bulk CMOS technology, optical noise equivalent power (NEP) 14 pW/ $\sqrt {Hz}$ 720 GHz was measured, HBT 0.25 μm NEP 47 700 found. Based 1k-pixel average consumption 2.5 μW/pixel, specific video-mode outlined co-integration issues readout analyzed. Furthermore, single-chip 2 × array heterodyne receivers multi-color imaging 160–1000 band presented well-balanced across bandwidth ranging from 0.1 0.24 fW/Hz (44.1–47.8 dB single-sideband NF) instantaneous IF 10 GHz. In its present implementation, RF not continuously covered but divided into six bands centered around 165, 330, 495, 660, 820, 990